| PART |
Description |
Maker |
| DS1380N DS1380SN |
NVRAM (Battery Based)
|
|
| DS1345YL-70 DS1345YL-70-IND DS1345BL-70 DS1345BL-7 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Cypress Semiconductor, Corp.
|
| DS1275 DS1270Y-70-IND DS1270Y-100-IND DS1270AB-70- |
NVRAM (Battery Based) NVRAM中（基于电池
IC,LINE TRANSCEIVER,CMOS,1 DRIVER,1 RCVR,DIP,8PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| M41ST87W11 M41ST87WSS6F |
Serial real-time clock (RTC) supervisor
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
ST Microelectronics
STMicroelectronics
|
| GN01100B |
GaAs IC (with built-in ferroelectric)
|
Panasonic Semiconductor
|
| MR44V064A |
64k(8,192-Word ?8-Bit) FeRAM (Ferroelectric Random Access Memory)
|
LAPIS Semiconductor Co....
|
| STK12C68-5S30 STK12C68-5W30 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| DS2217-120 DS2217-150 |
NVRAM(BatteryBased)
|
|
| M40SZ100WMQ6F |
3 V NVRAM supervisor for LPSRAM
|
ST Microelectronics
|
| M40Z11107 M40Z111WMH6E M40Z111WMH6F M4Z32-BR00SH1 |
5V or 3V NVRAM supervisor for up to two LPSRAMs
|
STMicroelectronics
|
